Sapphire Substrate - A-Plane

A-Plane sapphire substrates are useful for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics.  This orientation can also be used for the growth of high T_c superconductors. The availability of Angstrom level surface finishes allows for fine line interconnects of hybrid modules.

Standard Specification

Material	Czochralski grown sapphire (>=99.995% High Purity monocrystalline Al2O3).
Surface Orientation	A-Plane (1 1 -2 0) surface orientation, also called 90-degrees.  Surface oriented within 0.3-degrees. Other offcuts are available.
Crystallinity	No visual evidence of slips, twins, lineage or fractures
Dimensions	Outer Diameter	50.8mm ± 0.1mm, 76.2mm ± 0.25mm, 100.0mm ± 0.4mm 150.0mm ± 0.5mm
	Thickness	500μm ± 10μm, 430μm ± 10μm, 330μm ± 15μm
	Surface Flatness	<25μm, depending on thickness
	Surface Bow	<25μm, depending on thickness
	Surface Taper	<25μm, depending on thickness
	Primary Flat Length	16mm ± 1mm, 22mm ± 1mm, 32.5mm ± 1mm
	Primary Flat Location	Parallel to the C-axis <0 0 0 1>, within 0.2 °
Edges	The edges of the substrates have a ground finish.
Edge Chips	Edge defects in general will not exceed those stated in SEMI M3-91.
Frontside Surface Finish	A smooth, polished surface finish suitable for epitaxy. No visible scratches, pits, dimples or contamination allowed. Ra typically < 0.20nm.
Backside Surface Finish	Depends on whether wafer is single side polished or double side polished. SSP: Fine ground, Ra typically 0.4 to 1.5μm. DSP: Polished.
Note	Other wafers orientations are available, including R-plane (1 -1 0 2), C-plane (0 0 0 1) and M-plane (1 -1 0 0) .

The data above is representative only, with a combination of data from our suppliers, and should not be considered absolute or warrantable. Specifications will be in given in our quotations and additional information is available on request. For a quotation please do not hesitate to contact us with your specific requirements.