Sapphire Substrate - C-Plane

Basal Plane Sapphire Substrates with one or both surfaces polished are useful for the growth of lll-V and ll-Vl compoounds, such as GaN, for bright blue and green LED and laser diodes.  Other applications include mercury cadmium telluride for infrared detector applications.

Sapphire Substrate Slice
Sapphire Substrate Surface Profile

Standard Specification

Material Czochralski grown sapphire (>=99.995% High Purity monocrystalline Al2O3).
Surface Orientation C-Plane (0001) surface orientation, also called 0-degrees, off M (1-100) 0.2°, 0.3° . Other offcuts available.
Crystallinity No visual evidence of slips, twins, lineage or fractures
Dimensions   Outer Diameter 50.8mm ± 0.1mm, 76.2mm ± 0.25mm, 100.0mm ± 0.4mm
150.0mm ± 0.5mm
  Thickness 500μm ± 10μm, 430μm ± 10μm, 330μm ± 15μm
  Surface Flatness <25μm, depending on thickness
  Surface Bow <25μm, depending on thickness
  Surface Taper <25μm, depending on thickness
  Primary Flat Length 16mm ± 1mm, 22mm ± 1mm, 32.5mm ± 1mm
  Primary Flat Location Parallel to M-axis, within 0.2 °
Edges The edges of the substrates have a ground finish.
Edge Chips Edge defects in general will not exceed those stated in SEMI M3-91.
Frontside Surface Finish A smooth, polished surface finish suitable for epitaxy. No visible scratches, pits, dimples or contamination allowed. Ra typically < 0.20nm.
Backside Surface Finish Depends on whether wafer is single side polished or double side polished. SSP: Fine ground, Ra typically 0.4 to 1.5μm. DSP: Polished.
Note Other wafers orientations are available, including R-plane (1 -1 0 2), A-plane (1 1 -2 0) and M-plane (1 -1 0 0).

The data above is representative only, with a combination of data from our suppliers, and should not be considered absolute or warrantable. Specifications will be in given in our quotations and additional information is available on request. For a quotation please do not hesitate to contact us with your specific requirements.